 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FGH40N120AN 1200V NPT IGBT FGH40N120AN 1200V NPT IGBT Features * High speed switching * Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A * High input impedance * RoHS complaint IGBT Description July 2008 (R) Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. E C G C G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM(1) PD SCWT TJ TSTG TL Notes: (1) Pulse width limited by max. junction temperature Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 seconds @TC = 25C @TC = 100C @TC = 25C @TC = 100C FGH40N120AN 1200 25 64 40 160 417 167 10 -55 to +150 -55 to +150 300 Units V V A A A W W s C C C Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.3 40 Units C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH40N120AN Rev. A2 FGH40N120AN 1200V NPT IGBT Package Marking and Ordering Information Device Marking FGH40N120AN Device FGH40N120AN Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ---- -0.6 --- --1 250 V V/C mA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 40A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, TC = 125C IC = 64A, VGE = 15V Dynamic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---3200 370 125 ---pF pF pF 3.5 ---5.5 2.6 2.9 3.15 7.5 3.2 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate charge Gate-Emitter Charge Gate-Collector Charge VCE = 600V, IC = 40A, VGE = 15V VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 125C VCC = 600V, IC = 40A, RG = 5, VGE = 15V, Inductive Load, TC = 25C -----------------15 20 110 40 2.3 1.1 3.4 20 25 120 45 2.5 1.8 4.3 220 25 130 ---80 3.45 1.65 5.1 ----------ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC 2 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 Figure 2. Typical Saturation Voltage Characteristics 160 Common Emitter VGE = 15V TC = 25 C 120 o TC = 25C 250 20V 17V 15V Collector Current, IC [A] 200 12V 150 Collector Current, IC [A] TC = 125 C o 80 100 VGE = 10V 40 50 0 0 2 4 6 8 10 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 Common Emitter VGE = 15V Figure 4. Load Current vs. Frequency 70 V CC = 600V load Current : peak of square wave Collector-Emitter Voltage, VCE [V] 4 80A 56 Load Current [A] 42 3 40A 28 2 IC = 20A 14 Duty cycle : 50% T = 100 C C o Powe Dissipation = 100W 1 25 50 75 100 125 0 0.1 1 10 Frequency [kHz] 100 1000 Case Temperature, TC [C] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25C Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 125C Collector-Emitter Voltage, VCE [V] 16 Collector-Emitter Voltage, VCE [V] 16 12 12 8 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 80A 4 40A IC = 20A 0 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] 3 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 6000 (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25C Ciss 100 5000 Capacitance [pF] 4000 Switching Time [ns] tr 3000 2000 Coss 1000 Crss td(on) Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25C TC = 125C 0 1 10 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [] Figure 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V, IC = 40A TC = 25C TC = 125C td(off) Figure 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 TC = 25C TC = 125C Eon 100 Switching Loss [mJ] Switching Time [ns] Eoff tf 1 10 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance, RG [] Gate Resistance, RG [] Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 100 TC = 25C TC = 125C tr Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 TC = 25C TC = 125C td(off) Switching Time [ns] Switching Time [ns] 100 tf td(on) 10 20 30 40 50 60 70 80 20 30 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 4 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter VGE = 15V, RG = 5 TC = 125C Figure 14. Gate Charge Characteristics 16 14 Common Emitter RL = 15 TC = 25C Gate-Emitter Voltage, VGE [V] 10 TC = 25C Vcc = 200V 600V Eon 12 10 8 6 4 2 0 Switching Loss [mJ] 400V Eoff 1 0.1 20 30 40 50 60 70 80 0 50 100 150 200 250 Collector Current, IC [A] Gate Charge, Qg [nC] Figure 15. SOA Characteristics 500 IC MAX (Pulse) 10s Figure 16. Turn-Off SOA 100 Collector Current, Ic [A] 100 10 I MAX (Continuous) C 1 1ms 10 ms DC Operation Collector Current, IC [A] 100s 10 *Notes: 0.1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 1 Safe Operating Area o VGE = 15V, TC = 125 C 1 10 100 1000 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 5 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters 6 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 7 FGH40N120AN Rev. A2 www.fairchildsemi.com |
Price & Availability of FGH40N120AN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |